Solid-state imaging device and method for manufacturing the same

Solid-state imaging device and method for manufacturing the same

  • CN 101,494,233 A
  • Filed: 01/23/2009
  • Published: 07/29/2009
  • Est. Priority Date: 01/24/2008
  • Status: Active Application
First Claim
Patent Images

1. device for solid photography, it comprises:

  • The light-receiving pixel portions, it is formed on the semiconductor substrate;

    The black-level reference pixel portions, it is formed on the described semiconductor substrate;

    AndMultilayer wiring portion, it is arranged at the top of the described semiconductor substrate that comprises described light-receiving pixel portions and described black-level reference pixel portions, this multilayer wiring portion comprises insulating barrier that is formed at described semiconductor substrate top and the metal wiring layer that forms multilayer in this insulating barrierWherein, described multilayer wiring portion has first photomask and second photomask, described first photomask is formed at as the top, zone between first metal line of first metal wiring layer of one of described metal wiring layer of described black-level reference pixel portions top, and described second photomask is connected with described first photomask and is formed by second metal wiring layer above described first wiring layer.

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