Methods of forming carbon-containing silicon epitaxial layers

Methods of forming carbon-containing silicon epitaxial layers

  • CN 101,496,153 A
  • Filed: 07/31/2007
  • Published: 07/29/2009
  • Est. Priority Date: 07/31/2006
  • Status: Active Application
First Claim
Patent Images

1. method that on base material, forms epitaxial layer stack, it comprises at least:

  • Select a target concentration of carbon of this epitaxial layer stack;

    On this base material, form a carbon containing silicon layer, and according to selected this target concentration of carbon, select at least one of an initial carbon concentration, a thickness and a sedimentation time that this carbon containing silicon layer had;

    AndBefore etching, on this carbon containing silicon layer, form a non-carbon containing silicon layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×