Yttrium oxide material, member for use in semiconductor manufacturing apparatus, and method for producing yttrium oxide material

Yttrium oxide material, member for use in semiconductor manufacturing apparatus, and method for producing yttrium oxide material

  • CN 101,508,567 A
  • Filed: 02/13/2009
  • Published: 08/19/2009
  • Est. Priority Date: 02/13/2008
  • Status: Active Application
First Claim
Patent Images

1. a Yttrium oxide material is characterized in that, contains:

  • Y 2O 3, SiC and the compound that contains RE (rare earth element), Si, O and N.

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