Film transistor array substrate

Film transistor array substrate

  • CN 101,515,590 B
  • Filed: 03/30/2009
  • Issued: 01/07/2015
  • Est. Priority Date: 03/30/2009
  • Status: Active Grant
First Claim
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1. a plurality of groups of substrates of thin-film transistor, is characterized in that, comprises:

  • One base material;

    One first patterned conductive layer is positioned on this base material, and wherein this first patterned conductive layer comprises scan line, a gate and a floating electrode, and wherein this gate is electrically connected this scan line;

    One first insulating barrier is positioned on this first patterned conductive layer;

    Semi-conductor layer, be positioned on this first insulating barrier, wherein this semiconductor layer comprises a channel region;

    One second patterned conductive layer is positioned on this first insulating barrier, wherein this second patterned conductive layer comprises one source pole, one drain, the extension electrode of the data wire interlocked with scan line and a drain, and this gate, this source electrode, this drain and this channel region form a thin-film transistor, wherein this source electrode is electrically connected this data wire and the extension electrode part of this drain and this floating electrode overlap, with the extension electrode of this drain padded, wherein, not staggered or overlapping with this data wire and the electric connection all non-with any assembly of this floating electrode, and the current potential of this floating electrode is equal or close to earthing potential,One second insulating barrier is positioned on this second patterned conductive layer;

    One through hole, runs through this second insulating barrier, and exposes the extension electrode of this drain of part;

    AndOne pixel electrode, by this through hole, is electrically connected the extension electrode of this drain.

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