Method for manufacturing conductors and semiconductors

Method for manufacturing conductors and semiconductors

  • CN 101,518,164 B
  • Filed: 07/05/2007
  • Issued: 11/12/2014
  • Est. Priority Date: 07/21/2006
  • Status: Active Grant
First Claim
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1. sintering method, in described sintering method, comprise conduction or the semiconductive nano particle of sealing and the layer of granular material that is placed in dielectric base be sintered, for improving its conductivity, it is characterized in that, the voltage that applies generation electric field in the described layer of granular material of described sintering by the nano particle sealing described in comprising is carried out, the fusing of the encapsulating material between that this electric field starts described conduction by tunnel(l)ing current and positive heat feedback or semiconductive nano particle, thereby described nano particle is sintered together and forms to the material of the conductivity with raising, wherein, nano particle has the encapsulated layer being formed by polymer, the softening temperature of described encapsulated layer is less than or equal to the fusion temperature of nano particle, and the thickness of described encapsulated layer be less than nano particle diameter 30%.

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