For the volatile memory elements with boosted output voltages of programmable logic device integrated circuits

For the volatile memory elements with boosted output voltages of programmable logic device integrated circuits

  • CN 101,529,374 B
  • Filed: 11/10/2006
  • Issued: 11/25/2015
  • Est. Priority Date: 11/17/2005
  • Status: Active Grant
First Claim
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1. an integrated circuit, it comprises:

  • Power regulator circuitry, usedly during its higher level used in the normal operation period and data loading operations becomes power supply electrical level when comparatively changing between low level;

    To become the memory element array that power supply electrical level is powered time described, when wherein becoming power supply electrical level into described higher level when described, the memory element that at least some is loaded provides the output signal being in described higher level;

    WithData loading circuitry, this data loading circuitry become when described power supply electrical level be in described in comparatively low level time load data in described memory element, wherein each described memory element comprises cross-linked phase inverter, described phase inverter has and is connected on p-channel transistor between feeder ear and earth terminal and n-channel transistor, provides become power supply electrical level from during described power regulator circuitry described at described feeder ear place.

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