Probabilistic error correction in multi-bit-per-cell flash memory

Probabilistic error correction in multi-bit-per-cell flash memory

  • CN 101,529,525 A
  • Filed: 10/15/2006
  • Published: 09/09/2009
  • Est. Priority Date: 10/17/2005
  • Status: Active Application
First Claim
Patent Images

1. one kind is read the method that is stored in a plurality of data bit in the storer that comprises a plurality of multi-bit cells, described storage is by calculating and the corresponding a plurality of parity bits of data bit, then data bit and parity bit are stored in as bank bit in the unit of storer and realize, a plurality of bank bits separately are stored in each of unit, and the method comprising the steps of:

  • (a) reading unit, thus for each unit, obtain a plurality of positions of reading separately;

    And(b) basis and corresponding described bit correction and the corresponding described position of reading of data bit of reading of parity bit, wherein said correction realizes that at least in part wherein at least one described estimation is different from another described estimation at least at least according to described prior estimate of reading the probability separately that two are made mistakes in the position.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×