Film transistor, manufacturing method thereof and image display device

Film transistor, manufacturing method thereof and image display device

  • CN 101,533,858 A
  • Filed: 04/03/2009
  • Published: 09/16/2009
  • Est. Priority Date: 04/03/2009
  • Status: Active Application
First Claim
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1. thin-film transistor, comprise the gate electrode, channel layer, source region and the drain region that are arranged on the substrate, it is characterized in that, described channel layer is formed at the top of described gate electrode, described channel layer the size on the orientation less than gate electrode equidirectional length and being within the coverage of described gate electrode length, described source region and drain region be formed at described gate electrode both sides and with described grid electrode insulating, described source region and the drain region formation schottky junction that contacts with the two sides of described channel layer length direction respectively.

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