Method for forming nitride crystals

Method for forming nitride crystals

  • CN 101,535,532 A
  • Filed: 10/05/2007
  • Published: 09/16/2009
  • Est. Priority Date: 10/08/2006
  • Status: Active Application
First Claim
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1. be used for growing nitride crystalline method, it comprises:

  • Provide and comprise the source material that is lower than 1 weight percent oxygen;

    Mineralizer is provided;

    Randomly, provide more than one crystal seed;

    Utricule is provided;

    Fill this utricule with nitrogen-containing solvent;

    Under the pressure that is higher than under about 550 ℃

    of temperature and is higher than about 2kbar in supercutical fluid this utricule of processing and inclusion.

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