Bonding method of three dimensional wafer lamination based on silicon through holes

Bonding method of three dimensional wafer lamination based on silicon through holes

  • CN 101,542,702 A
  • Filed: 06/05/2008
  • Published: 09/23/2009
  • Est. Priority Date: 06/05/2008
  • Status: Active Application
First Claim
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1. method that forms wafer lamination, step comprises:

  • assemble a plurality of wafers, wherein each described wafer has a through hole at least, wherein there is being a microchannel to be used for to connect a through hole on the described wafer and a through hole on described another wafer between two wafer interfaces, it is indoor a weldering to place described a plurality of wafer, and apply the first surface of first wafer of a vacuum in the described wafer lamination, draw molten solder with the second surface of the bottom wafer from described wafer lamination and pass described through hole and microchannel, fill the full weld material up to described through hole and microchannel.

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