Plasma processing reactor with multiple capacitive and inductive power sources

Plasma processing reactor with multiple capacitive and inductive power sources

  • CN 101,557,885 B
  • Filed: 02/15/2007
  • Issued: 03/11/2015
  • Est. Priority Date: 02/15/2006
  • Status: Active Grant
First Claim
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1. a plasma processing chamber, in order to produce plasma, it comprises:

  • Bottom electrode assembly, there is inner. bottom electrode and be arranged on the outer bottom electrode of this inner. bottom electrode outside, wherein this inner. bottom electrode is in order to hold substrate, and this outer bottom electrode is positioned at below conducting ring, thus for plasma provides additional grounding path in processing thereof, and this inner. bottom electrode and this conducting ring are separated by dielectric collar, this inner. bottom electrode and this outer bottom electrode are in the inside of this plasma processing chamber;

    AndTop electrode assembly, has top electrode, and wherein this top electrode is arranged on directly over this inside and outer bottom electrode;

    Wherein this outer bottom electrode and this top electrode are in order to being the second plasma by the second gas transition, its away from this inner. bottom electrode and the neighboring area be mainly arranged between this outer bottom electrode and this top electrode to clear up the periphery compartment hardware of this plasma processing chamber.

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