Solid-state image pickup device and making method thereof

Solid-state image pickup device and making method thereof

  • CN 101,567,378 B
  • Filed: 04/22/2009
  • Issued: 03/27/2013
  • Est. Priority Date: 04/23/2008
  • Status: Active Grant
First Claim
Patent Images

1. solid-state image pickup device is characterized in that possessing:

  • Substrate;

    Transistor, its lower layer side from aforesaid substrate begins to upper layer side, is formed with in order gate electrode, gate insulating film, semiconductor film, drain electrode and source electrode;

    The lower layer side dielectric film, it is formed at the face side of aforementioned drain electrode and aforementioned source electrode, and comprises inoranic membrane;

    The components of photo-electric conversion, it comprises the 2nd electrode that is connected to the 1st electrode, the lamination of above-mentioned drain electrode or above-mentioned source electrode and is connected in P type semiconductor film, N type semiconductor film and the lamination of above-mentioned the 1st electrode and is connected in above-mentioned N type semiconductor film via the contact hole that is formed at above-mentioned lower layer side dielectric film;

    The upper layer side dielectric film, it is configured on above-mentioned the 2nd electrode, and comprises that side with the above-mentioned semiconductor film of the above-mentioned components of photo-electric conversion joins and the inorganic insulating membrane that forms;

    AndBe formed at the contact hole of above-mentioned upper layer side dielectric film;

    Bias line, it is formed on the above-mentioned upper layer side dielectric film, and is connected in above-mentioned the 2nd electrode via above-mentioned contact hole;

    Be arranged on the above-mentioned upper layer side dielectric film and cover the sealer of the inoranic membrane of above-mentioned bias line;

    Wherein, configuration is a plurality of has the pixel of above-mentioned transistor and the above-mentioned components of photo-electric conversion and consists of shooting area;

    The lower layer side of above-mentioned the 1st electrode by the above-mentioned components of photo-electric conversion has extended to form the electric capacity line, by above-mentioned electric capacity line across above-mentioned lower layer side dielectric film form storage capacitance relative to above-mentioned the 1st electrode;

    Above-mentioned bias line be connected in above-mentioned transistorized source line and extend to form concurrently, above-mentioned electric capacity line is and is connected in conducting film that above-mentioned transistorized grid line forms simultaneously and itself and above-mentioned grid line and extends side by side.

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