Operating method of electrical pulse voltage for RRAM application

Operating method of electrical pulse voltage for RRAM application

  • CN 101,577,309 A
  • Filed: 05/05/2009
  • Published: 11/11/2009
  • Est. Priority Date: 05/06/2008
  • Status: Active Application
First Claim
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1. , a kind of method of manufacturing one storage device is characterized in that this method comprises:

  • Form a metal-oxide memory element;

    AndAfter this forms step, apply an activation energy to this metal-oxide memory element.

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