Operating method of electrical pulse voltage for RRAM application

Operating method of electrical pulse voltage for RRAM application

  • CN 101,577,309 B
  • Filed: 05/05/2009
  • Issued: 05/14/2014
  • Est. Priority Date: 05/06/2008
  • Status: Active Grant
First Claim
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1. a method of manufacturing a storage device, is characterized in that, the method comprises:

  • Form a metal-oxide memory element;

    Apply an activation energy to this metal-oxide memory element;

    Wherein, this applies activation energy is to utilize a bias circuit to apply an activation adjustment to be biased into this metal-oxide memory element, and wherein this bias circuit is coupled to this metal-oxide memory element;

    Or this applies activation energy is that this metal-oxide memory element is carried out to activation annealing technique, thermal activation can be provided to this metal-oxide memory element;

    This activation that this bias circuit is applied to this metal-oxide memory element is adjusted bias voltage and is greater than the programming that in the time that this metal-oxide memory element is carried out to programming operation this bias circuit puts on this metal-oxide memory element and adjusts bias voltage, this programming is adjusted bias voltage and is comprised one first adjustment bias voltage and the one second adjustment bias voltage in order to change resistance states between high resistance state and low resistance state, and this first adjustment bias voltage is in order to be converted to this low resistance state by this resistance states of this metal-oxide memory element by this high resistance state;

    This second adjustment bias voltage is in order to be converted to this high resistance state by this resistance states of this metal-oxide memory element by this low resistance state.

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