Inductive couple plasma processing device

Inductive couple plasma processing device

  • CN 101,583,234 A
  • Filed: 05/14/2009
  • Published: 11/18/2009
  • Est. Priority Date: 05/14/2008
  • Status: Active Application
First Claim
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1. an inductive couple plasma processing device is characterized in that, comprising:

  • Accommodate handled object and implement the process chamber of plasma treatment;

    The mounting table of mounting handled object in described process chamber;

    In described process chamber, supply with the treating-gas supply system of handling gas;

    Gas extraction system to described processing indoor gas;

    High frequency antenna, its by dielectric members be configured in described process chamber the outside, have the concentric antenna part more than 3 that is set to that in described process chamber, forms induction field by supply high frequency electric power;

    WithAdjusting comprises in the antenna circuit of described each antenna part the impedance of at least one, controls the impedance adjustment unit of the current value of described antenna part thus;

    Described each antenna part, constitute a plurality of antenna cables and be configured to spiral helicine multiple antenna, and, set its winding method at its configuring area according to the mode that forms uniform electric field, between the configuring area of each antenna part, set it in the mode that can realize electric field homogenizing and twine number.

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