Method for implementing edge chamfer on semiconductor substrate with insulating buried layer

Method for implementing edge chamfer on semiconductor substrate with insulating buried layer

  • CN 101,599,451 B
  • Filed: 07/10/2009
  • Issued: 08/07/2013
  • Est. Priority Date: 07/10/2009
  • Status: Active Grant
First Claim
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1. one kind is carried out the method for edge chamfer to the Semiconductor substrate that has insulating buried layer, it is characterized in that, comprises the steps:

  • The Semiconductor substrate that has insulating buried layer is provided, and described silicon-on-insulator substrate comprises supporting layer, insulating buried layer and top-layer semiconductor;

    Upper surface and lower surface at substrate all form cover layer, and described upper surface is the surface of top-layer semiconductor one side, and lower surface is the another side relative with upper surface;

    Adopt the method for edge grinding with the edge chamfer of insulating buried layer and top-layer semiconductor;

    The upper surface of substrate upwards is positioned on the spin etching slide glass platform, etchant solution with tectal corrosive liquid and insulating buried layer passes to the cover layer of substrate top surface and rotates substrate simultaneously successively, thereby remove surperficial cover layer and edges of substrate owing to semiconductor layer is removed the insulating buried layer that exposes by grinding, and keep the cover layer at the back side.

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