Thin film transistor array and manufacturing method thereof

Thin film transistor array and manufacturing method thereof

  • CN 101,604,104 B
  • Filed: 07/22/2009
  • Issued: 06/11/2014
  • Est. Priority Date: 07/22/2009
  • Status: Active Grant
First Claim
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1. a thin film transistor (TFT) array, is characterized in that, described thin film transistor (TFT) array comprises:

  • One substrate;

    At least one thin film transistor (TFT), is positioned on described substrate;

    One first barricade, be positioned on described substrate, and on described substrate, at least separate out one first through hole and a pixel region, wherein said the first through hole exposes a drain electrode of described thin film transistor (TFT), and described the first barricade comprises;

    at least one the first side wall, towards described the first through hole;

    At least one the second sidewall, towards described pixel region, the gradient of more described the second sidewall of the gradient of wherein said the first side wall is slow, does not overflow so that obtain color blocking;

    One transparency electrode, by described the first through hole, is electrically connected the described drain electrode of described thin film transistor (TFT);

    AndOne color blocking, is filled in described pixel region.

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