Amorphous insulator film and thin-film transistor

Amorphous insulator film and thin-film transistor

  • CN 101,611,474 A
  • Filed: 02/04/2008
  • Published: 12/23/2009
  • Est. Priority Date: 02/19/2007
  • Status: Active Application
First Claim
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1. an amorphous insulator film is used as the gate-insulator film of thin-film transistor and comprises silica, whereinThis amorphous insulator film comprises Ar;

  • AndThe atomic ratio of the relative Si of amount of wherein included Ar is equal to or greater than 3at.%.

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