Methods of low temperature oxidation

Methods of low temperature oxidation

  • CN 101,625,975 A
  • Filed: 04/30/2009
  • Published: 01/13/2010
  • Est. Priority Date: 05/15/2008
  • Status: Active Application
First Claim
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1. , a kind of method that forms dielectric medium is characterized in that it may further comprise the steps:

  • In a manufacturing process chamber, a base material that comprises material is provided, wherein this manufacturing process chamber is a manufacturing process precursor ions can be turned to a plasma, this plasma comprises an oxydant and a fluorine-containing carbon component;

    AndUtilize a surface portion of this this material of plasma oxidation, this surface portion is changed into an oxidation dielectric material.

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