Thin-film transistor and manufacture method thereof and comprise the panel display apparatus of this transistor

Thin-film transistor and manufacture method thereof and comprise the panel display apparatus of this transistor

  • CN 101,626,036 B
  • Filed: 04/14/2009
  • Issued: 11/25/2015
  • Est. Priority Date: 07/08/2008
  • Status: Active Grant
First Claim
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1. a thin-film transistor, comprising:

  • Substrate;

    Form grid on the substrate;

    Be formed in the gate insulating film on described grid and described substrate;

    To be formed on described gate insulating film and by the active layer of described gate insulating film and described gate insulator, described active layer comprises compound semiconductor oxide, and described compound semiconductor oxide is ZnGaO, ZnInO, ZnSnO or GaInZnO;

    Be formed in the passivation layer on described active layer, comprise ZnGaO, ZnInO, ZnSnO, GaO or GaInZnO;

    WithBe formed in source electrode and drain electrode that described passivation layer contacts with described active layer,Wherein said passivation layer comprises the multiple element comprised in described compound semiconductor oxide.

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