Channel layer and the transistor comprising this channel layer

Channel layer and the transistor comprising this channel layer

  • CN 101,630,692 B
  • Filed: 07/14/2009
  • Issued: 03/02/2016
  • Est. Priority Date: 07/14/2008
  • Status: Active Grant
First Claim
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1. a transistor, comprising:

  • Channel layer, comprises lower floor and upper strata, and lower floor is different with the mobility on upper strata and formed by different oxide materials;

    Source electrode and drain electrode, contact the opposite end of channel layer respectively;

    Grid, for electric field is applied to channel layer,Wherein, the one deck closer to grid in lower floor and upper strata comprises at least one oxide selected from the group be made up of indium zinc oxide, tin indium oxide, aluminum zinc oxide, gallium oxide zinc,Wherein, the thickness closer to one deck of grid in lower floor and upper strata is extremely the threshold voltage of transistor is determined by the one deck away from grid in lower floor and upper strata.

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