Vertical iii-nitride light emitting diodes on patterned substrates with embedded bottom electrodes

Vertical iii-nitride light emitting diodes on patterned substrates with embedded bottom electrodes

  • CN 101,635,328 A
  • Filed: 04/30/2009
  • Published: 01/27/2010
  • Est. Priority Date: 07/21/2008
  • Status: Active Application
First Claim
Patent Images

1. a light-emitting diode comprisesOne substrate;

  • One light emitting diode construction comprisesOne buffering/nucleating layer is formed on this substrate;

    One active layer;

    AndOne top contact layer, wherein one first contact III family-nitride layer is arranged between this buffering/nucleating layer and the active layer, and one second contact III family-nitride layer is arranged between this active layer and the top contact layer;

    AndOne bottom electrode, wherein this this substrate of bottom electrode extend through and buffering/nucleating layer are to this first contact III family-nitride layer.

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