Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

  • CN 101,640,221 A
  • Filed: 07/31/2009
  • Published: 02/03/2010
  • Est. Priority Date: 07/31/2008
  • Status: Active Application
First Claim
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1. a semiconductor device comprises thin-film transistor, and this thin-film transistor comprises:

  • Gate electrode layer;

    Gate insulator on the described gate electrode layer;

    Semiconductor layer on the described gate insulator;

    N type resilient coating on the described semiconductor layer and the 2nd n type resilient coating;

    AndDrain electrode layer on source electrode layer on the described n type resilient coating and described the 2nd n type resilient coating,Wherein, described semiconductor layer, a described n type resilient coating and described the 2nd n type resilient coating comprise the oxide semiconductor that contains indium, gallium and zinc respectively,And the carrier concentration of a described n type resilient coating and described the 2nd n type resilient coating is higher than the carrier concentration of described semiconductor layer respectively.

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