Method for producing a semiconductor wafer

Method for producing a semiconductor wafer

  • CN 101,659,027 A
  • Filed: 08/27/2009
  • Published: 03/03/2010
  • Est. Priority Date: 08/27/2008
  • Status: Active Application
First Claim
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1. , is used to make the method for semiconductor wafer, it is included in this semiconductor wafer of polishing between the sand disk(-sc) up and down, wherein be arranged in the semiconductor wafer of leaving a blank twin polishing under the situation that adds polishing agent of carrier disk, is negative until this semiconductor wafer at the thickness at semiconductor wafer center and the difference of carrier disc thickness, the total amount of removing material reaches 10 μ

  • m to 30 μ

    m, and wherein said polishing agent comprises the SiO of 0.1 to 0.4 weight % 2And the alkaline component of 0.1 to 0.9 weight %.

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