Taiwan semiconductor mfg

Taiwan semiconductor mfg

  • CN 101,664,746 A
  • Filed: 08/26/2009
  • Published: 03/10/2010
  • Est. Priority Date: 08/26/2008
  • Status: Active Application
First Claim
Patent Images

1. the method for a Taiwan semiconductor mfg comprises the following step:

  • To have a reaction chamber assembly of process deposits thing at an outer surface, place a plasma phase depositing reaction chamber;

    AndBe enough to remove this process deposits thing one during in, bombard this reaction chamber assembly with a plasma.

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