Method and system for distributing gas for a bevel edge etcher

Method and system for distributing gas for a bevel edge etcher

  • CN 101,675,503 A
  • Filed: 03/28/2008
  • Published: 03/17/2010
  • Est. Priority Date: 04/06/2007
  • Status: Active Application
First Claim
Patent Images

1. plasma etching treatment chamber that is configured to the bevel edge of cleaning substrate comprises:

  • Around the bottom edge electrode of the base sheet rack of this plasma process chamber, wherein this base sheet rack is configured to receive this substrate, and this bottom edge electrode and this base sheet rack are by bottom-dielectric ring electrical isolation each other;

    Be defined in the top edge electrode of this bottom edge electrode top, this top edge electrode and this bottom edge electrode are configured to produce cleaning plasma to clean this bevel edge of this substrate;

    The air inlet of the top surface of this process chamber is passed in qualification, this air inlet is introduced and is handled gas with the certain position activated plasma in this process chamber, this position is between the axle and this top edge electrode of this substrate, and this plasma can contact the upper and lower surface of this bevel edge of this substrate;

    AndThe exhaust port of the top surface of top electrode assembly is passed in qualification, and this exhaust port is along the central shaft of this substrate.

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