Lithography method

Lithography method

  • CN 101,676,801 A
  • Filed: 05/08/2009
  • Published: 03/24/2010
  • Est. Priority Date: 09/15/2008
  • Status: Active Application
First Claim
Patent Images

1. photoetching method comprises:

  • Form the first patterning blocking layer on substrate, the above-mentioned first patterning blocking layer comprises at least one opening;

    On above-mentioned first patterning blocking layer and aforesaid substrate, form a water-soluble polymer layer, use at the interface of above-mentioned first patterning blocking layer and above-mentioned water-soluble polymer layer reacting;

    AndForm the second patterning blocking layer on aforesaid substrate, at least a portion of the wherein above-mentioned second patterning blocking layer is set at least one opening of the above-mentioned first patterning blocking layer or in abutting connection with at least a portion of the above-mentioned first patterning blocking layer.

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