Non-volatile memory device

Non-volatile memory device

  • CN 101,677,108 A
  • Filed: 09/21/2009
  • Published: 03/24/2010
  • Est. Priority Date: 09/19/2008
  • Status: Active Application
First Claim
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1. , a kind of Nonvolatile memory devices comprises:

  • At least one first electrode comprises at least one first semiconductor layer and resistivity at least one first conductive layer lower than the resistivity of described at least one first semiconductor layer of first conduction type;

    At least one second electrode comprises at least one second semiconductor layer with second conduction type of described first conductivity type opposite, and with described at least one first electrode crossing;

    At least one data storage layer is positioned at described at least one second semiconductor layer zone intersected with each other of described at least one first semiconductor layer and described at least one second electrode of described at least one first electrode.

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