Device and process for producing poly-crystalline or multi-crystalline silicon

Device and process for producing poly-crystalline or multi-crystalline silicon

  • CN 101,680,110 A
  • Filed: 12/21/2007
  • Published: 03/24/2010
  • Est. Priority Date: 04/27/2007
  • Status: Active Application
First Claim
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1. produce the method for crystalline silicon, it comprises the steps:

  • Form the melt of silicon raw material,Carry out the directional freeze of described silicon melt, whereinA) above described melt, provide the phase of the material that is gas, liquid or solid form, thereby consequently control the concentration that is selected from the foreign atom of oxygen, carbon and nitrogen in the crystalline silicon that solidifies in the silicon melt;

    And/orB) dividing potential drop of gaseous fraction in adjusting and/or the control silicon melt top gas phase, described gaseous fraction is selected from oxygen, carbon gas and nitrogen and contains at least a gaseous matter that is selected from the element of oxygen, carbon and nitrogen.

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