Phase change memory structure with multiple resistance states and methods of programming and sensing same

Phase change memory structure with multiple resistance states and methods of programming and sensing same

  • CN 101,681,676 A
  • Filed: 04/11/2008
  • Published: 03/24/2010
  • Est. Priority Date: 05/31/2007
  • Status: Active Application
First Claim
Patent Images

1. resistive memory cell, it comprises:

  • First and second electrodes;

    AndA plurality of phase change resistor elements, it is provided between described first electrode and second electrode, in the described resistive element each has the corresponding resistor curve that becomes along with program voltage, and described resistance curve is with respect to the described resistance curve of other person in the described resistive element and be shifted.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×