The manufacture method of the vehicles, display and semiconductor device

The manufacture method of the vehicles, display and semiconductor device

  • CN 101,685,796 B
  • Filed: 11/29/2002
  • Issued: 08/03/2016
  • Est. Priority Date: 11/30/2001
  • Status: Active Grant
First Claim
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1. the method manufacturing semiconductor device, including:

  • Form metal level and the lamination of oxide skin(coating) on the first substrate;

    Described lamination is formed barrier layer;

    Described barrier layer is formed non-single crystal semiconductor layer;

    With non-single crystal semiconductor layer described in laser scanning, in order to form crystalline semiconductor layer;

    Described crystalline semiconductor layer is patterned, in order to form island shape semiconductor layer;

    Use described island shape semiconductor layer, form thin film transistor (TFT);

    Described thin film transistor (TFT) is formed dielectric film;

    Described dielectric film is formed negative electrode and anode one of them, described negative electrode and described anode described one of them be electrically connected to described thin film transistor (TFT);

    One of them described in described negative electrode and described anode is formed luminescent layer;

    Form described negative electrode and the other in which of described anode on the light-emitting layer;

    The first binding agent is used to be adhered on described luminescent layer, described negative electrode and described anode by the second substrate;

    Carry out in the inside of described oxide skin(coating) or its border peeling off by physical unit and separate described first substrate with described metal level, andUse the second binding agent by flexibility the 3rd substrate attaching in described oxide skin(coating),The orientation of wherein said thin film transistor (TFT) aligns with the scanning direction of described laser.

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