Method for manufacturing array substrate of liquid crystal display device

Method for manufacturing array substrate of liquid crystal display device

  • CN 101,685,803 B
  • Filed: 09/25/2008
  • Issued: 12/26/2012
  • Est. Priority Date: 09/25/2008
  • Status: Active Grant
First Claim
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1. the manufacturing method of array base plate of a liquid crystal indicator is characterized in that, comprising:

  • Step 1 forms grid line and common wire on substrate front side;

    Step 2 forms silicon island, source electrode, drain electrode and thin film transistor channel on the substrate of completing steps 1;

    Step 3, deposit passivation layer on the substrate of completing steps 2;

    Step 4 applies photoresist on the substrate of completing steps 3;

    Step 5;

    Through adopting dull mask board to explosure in the front of said substrate, making public and development and etching at the reverse side of said substrate;

    Fringe region at drain electrode etches away passivation layer;

    And expose part drain electrode surface as the pixel electrode contact site, keep the photoresist of non-pixel region;

    Step 6, pixel deposition electrode transparency conducting layer on the substrate of completing steps 5;

    Step 7 is peeled off said photoresist, forms the pixel electrode figure at pixel region, and said pixel electrode is connected with drain electrode through said pixel electrode contact site;

    Wherein, said step 5 is specially;

    Step 101, from just the making public and develops in the face of said photoresist of said array base palte, removal is positioned at the said photoresist of via area with a dull mask plate, and a part of via area and said pixel electrode contact site are overlapping;

    Step 102 is carried out etching to said passivation layer, forms via hole at the edge of source-drain electrode, and exposes said pixel electrode contact site in said a part of via area;

    Step 103 is made public to said photoresist and is developed from the reverse side of said array base palte, removes the photoresist that is positioned at pixel region;

    Perhaps, said step 5 is specially;

    Step 201 is made public to the photoresist that is positioned at via area from the front of said array base palte with a dull mask plate, and a part of via area and said pixel electrode contact site are overlapping;

    Step 202 is made public to said photoresist and is developed from the reverse side of said array base palte, removes to be positioned at via area and the photoresist that is positioned at pixel region;

    Step 203 is carried out etching to said passivation layer, forms the pixel electrode contact site at the edge of source-drain electrode;

    Perhaps, said step 5 is specially;

    Step 301 is made public to the photoresist that is positioned at via area from the front of said array base palte with a dull mask plate fully, and a part of via area and said pixel electrode contact site are overlapping;

    Step 302 is carried out the part exposure to said photoresist and is developed from the reverse side of said array base palte, removes the photoresist that is positioned at via area, and the photoresist of pixel region is thinner than other regional photoresists;

    Step 303 is carried out etching to said passivation layer, forms the pixel electrode contact site at the edge of source-drain electrode.

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