Bonding wire for semiconductor devices

Bonding wire for semiconductor devices

  • CN 101,689,519 B
  • Filed: 12/02/2008
  • Issued: 05/06/2015
  • Est. Priority Date: 12/03/2007
  • Status: Active Grant
First Claim
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1. a bonding wire for semiconductor devices, its have the core that comprises conductive metal with on described core with the metal not identical with this core for the epidermal area of main component, it is characterized in that:

  • The main component forming described core is Cu,The metal of described epidermal area is face-centered cubic lattice, and the main component forming described epidermal area is at least one in Pd, Pt, Ru, Ag, and the thickness of described epidermal area is the scope of 0.005 μ

    m ~ 0.2 μ

    m,In the crystal orientation <


    in the wire length direction in the crystal face on the surface of the described epidermal area obtained on the surface measuring described bonding wire by EBSP method, be more than 50% relative to the orientation ratio shared by the <


    that the differential seat angle in described wire length direction comprises within 15 °


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