System and method for process variation monitor

System and method for process variation monitor

  • CN 101,707,180 B
  • Filed: 05/22/2003
  • Issued: 04/29/2015
  • Est. Priority Date: 05/22/2002
  • Status: Active Grant
First Claim
Patent Images

1. a semiconductor crystal wafer inspection method, comprising:

  • Illumination wafer is to receive multiple light intensity value of multiple crystal grain;

    Measure the light intensity value of the several pixels around each pixel and this pixel contiguous, wherein this each pixel is relevant to each crystal grain in multiple crystal grain with the several pixel around this pixel contiguous;

    AndBased on measured light intensity value, compared with the light intensity value of the light intensity value of each crystal grain and other crystal grain one or more or model die.

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