Method for reducing leakage current of a memory and related device

Method for reducing leakage current of a memory and related device

  • CN 101,714,402 B
  • Filed: 02/17/2009
  • Issued: 04/08/2015
  • Est. Priority Date: 10/08/2008
  • Status: Active Grant
First Claim
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1. can reduce a method for leakage current of memory, include:

  • When this storer is in holding state and mode of operation, provides one first voltage to a main word line drive unit of this storer and provide one second voltage higher than this first voltage to district'"'"'s wordline drive unit of this storer;

    AndIn this district'"'"'s wordline drive unit, use an absolute threshold voltage higher than a transistor of a particular value.

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