Method for preparing high-purity semi-insulating silicon carbide crystalloid

Method for preparing high-purity semi-insulating silicon carbide crystalloid

  • CN 101,724,893 A
  • Filed: 11/18/2009
  • Published: 06/09/2010
  • Est. Priority Date: 11/18/2009
  • Status: Active Grant
First Claim
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1. a method for preparing high-purity semi-insulating silicon carbide crystalloid is characterized in that, this method high-purity semi-insulating silicon carbide crystalloid of under the situation of deep energy level compensating elements of not mixing, growing, and this method comprises:

  • Use physical vapor transmission method grow silicon carbide crystals, in growth, make carborundum crystals crystalline growth under the non-equilibrium thermodynamics state, and the crystallization velocity that makes carborundum crystals reaches or near critical velocity, thereby generates the higher primary point defect concentration of crystalline silicon carbide crystal under the specific heat mechanical equilibrium condition in carborundum crystals;

    AndThe carborundum crystals of growth ending is cooled in 1000 ℃

    of-1500 ℃

    of scopes, to keep the primary point defect that forms in the growing silicon carbice crystals process, thereby the acquisition semi-insulating silicon carbide crystalloid, wherein the primary point defect concentration of semi-insulating silicon carbide crystalloid is higher than the poor of shallow donor that the involuntary doping in the carborundum crystals forms and shallow acceptor concentration.

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