Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds

Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds

  • CN 101,724,899 B
  • Filed: 09/08/2009
  • Issued: 11/19/2014
  • Est. Priority Date: 09/08/2009
  • Status: Active Grant
First Claim
Patent Images

1. a Grown by CZ Method N-type silicon single crystal bar, is characterized in that:

  • <

    100>

    crystal orientation, electrical resistivity range are 1~

    20 Ω

    cm, epidermis and minority carrier lifetime>

    =1000, cross section μ

    s, and interstitial oxygen content is [O i]≤

    17.5ppma, displacement carbon content is [Cs]≤

    0.5ppma。

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