Reducing poly-depletion through co-implanting carbon and nitrogen =

Reducing poly-depletion through co-implanting carbon and nitrogen =

  • CN 101,728,274 A
  • Filed: 10/27/2009
  • Published: 06/09/2010
  • Est. Priority Date: 10/27/2008
  • Status: Active Application
First Claim
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1. method that forms semiconductor structure, this method comprises:

  • Semiconductor substrate is provided;

    On this Semiconductor substrate, form gate dielectric layer;

    On this gate dielectric layer, form gate electrode layer;

    With carbon and nitrogen into this gate electrode layer that mixes;

    AndAfter the step of doping carbon and nitrogen, this gate dielectric layer of patterning and this gate electrode layer are to form gate dielectric and gate electrode respectively.

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