Forming methods of conducting structure and pad

Forming methods of conducting structure and pad

  • CN 101,728,317 B
  • Filed: 10/21/2008
  • Issued: 07/02/2014
  • Est. Priority Date: 10/21/2008
  • Status: Active Grant
First Claim
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1. a formation method for conductive structure, is characterized in that, comprises step:

  • The substrate that forms lower floor'"'"'s conductive structure is provided;

    On described substrate, form successively etching stop layer and interlayer dielectric layer;

    On described interlayer dielectric layer, define conductive structure opening figure;

    Taking described conductive structure opening figure as mask, interlayer dielectric layer forms conductive structure opening described in etching, and conductive structure opening sidewalls is attached with polymer;

    Remove the polymer that described conductive structure opening sidewalls adheres to;

    The etching stop layer of conductive structure open bottom described in etching, and the oxygen flow adding in described etching process is between 15sccm to 25sccm, so that the sidewall shape of conductive structure opening is good;

    In the stop-layer of conductive structure open bottom described in oxygen etching, remove the described polymer of part;

    In described conductive structure opening, fill metal, form conductive structure.

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