Dynamic substrate bias system and method for suppressing negative bias temperature instability

Dynamic substrate bias system and method for suppressing negative bias temperature instability

  • CN 101,729,057 A
  • Filed: 06/30/2009
  • Published: 06/09/2010
  • Est. Priority Date: 10/29/2008
  • Status: Active Application
First Claim
Patent Images

1. dynamic substrate bias system that suppresses negative bias temperature instability is characterized in that it comprises at least:

  • One P channel metal oxide semiconductor transistor has one source pole and is connected to a power supply;

    AndOne voltage control circuit, be configured to export one first voltage level and one second voltage level, this first voltage level and this second voltage level are different, and this first voltage level is lower than this supply voltage, wherein when this P channel metal oxide semiconductor transistor is opened, this first voltage level will put on a matrix of this P channel metal oxide semiconductor transistor, and when this P channel metal oxide semiconductor transistor is closed, this second voltage level will put on this matrix of this P channel metal oxide semiconductor transistor.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×