Inductive couple plasma processing device and method of plasma processing

Inductive couple plasma processing device and method of plasma processing

  • CN 101,730,375 B
  • Filed: 10/27/2009
  • Issued: 09/02/2015
  • Est. Priority Date: 10/27/2008
  • Status: Active Grant
First Claim
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1. an inductive couple plasma processing device, is characterized in that, has:

  • Process chamber, holds processed substrate and implements plasma treatment;

    Mounting table, the processed substrate of mounting in described process chamber;

    Treating-gas supply system, supply process gas in described process chamber;

    Gas extraction system, is exhausted in described process chamber;

    Antenna circuit, is configured in the outside of described process chamber, is supplied to High frequency power by dielectric members, form induction field thus in described process chamber;

    WithParallel circuits, is connected in parallel with described antenna circuit,This inductive couple plasma processing device is configured to make the impedance of the impedance of described antenna circuit and described parallel circuits become antiphase, between the described antenna circuit be connected in parallel mutually and described parallel circuits, produce circulating current, in described process chamber, generate inductively coupled plasma.

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