Read circuit for semiconductor memory device and semiconductor memory device

Read circuit for semiconductor memory device and semiconductor memory device

  • CN 101,740,098 A
  • Filed: 11/12/2009
  • Published: 06/16/2010
  • Est. Priority Date: 11/12/2008
  • Status: Active Application
First Claim
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1. sensing circuit from the semiconductor storage of the capable sense data of serial output terminal substring is characterized in that comprising:

  • A plurality of byte selector switchs are exported the 1st~

    the 8th data-signal of a plurality of memory cells from regulation respectively based on the address;

    A plurality of sensor amplifiers, read out in respectively simultaneously determine the address come when determining the address might selecteed a plurality of described byte selector switchs each described the 1st data-signal, and when reading out in described definite address respectively from described the 2nd~

    the 8th data-signal of the described byte selector switch corresponding with determined address;

    AndSelector circuit, after determining the address, select described the 1st data-signal in each described the 1st data-signal also to be read, and select described the 2nd~

    the 8th data-signal also to be read successively from the corresponding described byte selector switch in described and determined address.

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