The segregate tri-gate transistor of making on the body substrate

The segregate tri-gate transistor of making on the body substrate

  • CN 101,755,327 A
  • Filed: 06/30/2008
  • Published: 06/23/2010
  • Est. Priority Date: 07/18/2007
  • Status: Active Application
First Claim
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1. method that forms segregate semiconductor body comprises:

  • The body substrate is carried out composition, to form fin structure;

    Deposition of insulative material around described fin structure;

    Make described insulating material depression, to expose the part of described fin structure;

    Depositing nitride lid on the part that is exposed of described fin structure is to protect the part that is exposed of described fin structure;

    Carry out thermal oxidation technology, be positioned at the not protected part of described nitride cap below, thereby make the protected part and described body substrate isolation of described fin structure with the described fin structure of oxidation;

    AndRemove described nitride cap.

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