Nitride semiconductor light emitting element

Nitride semiconductor light emitting element

  • CN 101,771,124 B
  • Filed: 12/28/2009
  • Issued: 03/18/2015
  • Est. Priority Date: 12/26/2008
  • Status: Active Grant
First Claim
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1. a nitride semiconductor luminescent element, the nitride semiconductor layer wherein at least comprising luminescent layer is formed in light-transmissive substrates,Described light-transmissive substrates has upper surface, is formed with multiple recess area and protuberance region on this upper surface, wherein:

  • When plane graph is seen, the side in each described recess area and each described protuberance region is formed by the polygon with at least one summit, and this at least one summit has 180 °

    or larger interior angle, andViewed from plane graph time, the opposing party in each described recess area and each described protuberance region is formed as not being linked to be straight line each other in all directions.

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