Method for setting pcram devices

Method for setting pcram devices

  • CN 101,777,380 A
  • Filed: 08/17/2009
  • Published: 07/14/2010
  • Est. Priority Date: 01/12/2009
  • Status: Active Application
First Claim
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1. the method for an operation store unit, wherein this storage unit comprises a phase change memory component, this phase change memory component programmable is to a plurality of resistance states, and described resistance states comprises a higher-resistivity state and than low resistance state, and the method for this operation store unit comprises:

  • Bestow a bias arrangement to this storage unit so that described resistance states is changed to this than low resistance state from this higher-resistivity state, wherein bestow this bias arrangement to this storage unit and comprise one first potential pulse and one second potential pulse of bestowing this phase change memory component, and the polarity of voltage of this second potential pulse is different from this first potential pulse.

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