Insulated gate semiconductor device

Insulated gate semiconductor device

  • CN 101,789,427 A
  • Filed: 12/25/2009
  • Published: 07/28/2010
  • Est. Priority Date: 12/25/2008
  • Status: Active Application
First Claim
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1. an insulated gate semiconductor device is characterized in that, comprising:

  • One conductive-type semiconductor layer;

    The opposite conduction type semiconductor layer is arranged on this conductive-type semiconductor layer;

    Element area is configured in the transistor unit of the insulated-gate semiconductor element that is provided with on this opposite conduction N-type semiconductor N laminar surface;

    Diode is arranged on the outer described opposite conduction N-type semiconductor N laminar surface of this element area, and negative electrode is connected the gate electrode of described insulated-gate semiconductor element, and anode is connected the link with gate driver circuit;

    AndResistance is arranged on the outer described opposite conduction N-type semiconductor N laminar surface of described element area, is connected in parallel with the two ends of described diode.

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