Structure of light emitting diode chip and manufacture method thereof

Structure of light emitting diode chip and manufacture method thereof

  • CN 101,814,565 A
  • Filed: 03/02/2010
  • Published: 08/25/2010
  • Est. Priority Date: 03/02/2010
  • Status: Active Application
First Claim
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1. LED chip construction, it comprises growth substrates and is positioned at semiconductor epitaxial layers on the growth substrates, described semiconductor epitaxial layers comprises n type semiconductor layer, active layer from top to bottom, reaches p type semiconductor layer, and it is characterized in that:

  • the edge of the cross section of described growth substrates or semiconductor epitaxial layers or growth substrates and semiconductor epitaxial layers is zigzag or waveform.

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