TFT-LCD ( Thin Film Transistor-Liquid Crystal Diode) array substrate and manufacture method thereof

TFT-LCD ( Thin Film Transistor-Liquid Crystal Diode) array substrate and manufacture method thereof

  • CN 101,840,117 B
  • Filed: 03/16/2009
  • Issued: 02/19/2014
  • Est. Priority Date: 03/16/2009
  • Status: Active Grant
First Claim
Patent Images

1. a TFT-LCD manufacturing method of array base plate, is characterized in that, comprising:

  • Step 1, on substrate, sedimentary origin leaks metallic film and doped semiconductor films, forms the figure that comprises data line, source electrode and drain electrode by composition technique;

    Step 2, on the substrate of completing steps 1 deposited semiconductor film and transparent conductive film, form the figure comprise semiconductor layer and pixel electrode, pixel electrode is directly connected with drain electrode, and the shape of pixel electrode and the shape of semiconductor layer are complementary shape;

    Step 3, on the substrate of completing steps 2, deposit gate insulation layer and grid metallic film, by composition technique, form the figure that comprises grid line, gate electrode and interface via hole;

    Wherein, described step 2 comprises;

    On the substrate of completing steps 1, deposition layer of semiconductor film;

    On semiconductive thin film, apply one deck photoresist;

    Adopt normal masks plate to expose to photoresist, make the photoresist formation complete reserve area of photoresist and photoresist remove region completely, wherein photoresist is removed region completely corresponding to the figure region of pixel electrode, and the complete reserve area of photoresist is corresponding to the figure region of semiconductor layer;

    After development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and the photoresist that photoresist is removed region is completely completely removed;

    By etching technics, etch away the semiconductive thin film that photoresist is removed region completely completely, form the figure of semiconductor layer, remove semiconductor layer and the doping semiconductor layer of drain electrode part surface simultaneously, the part surface of drain electrode is come out;

    Complete on the substrate of abovementioned steps deposition layer of transparent conductive film;

    Adopt the photoresist on liftoff lift-off technology stripping semiconductor film, transparent conductive film on photoresist is also together removed, form the figure of pixel electrode, partial pixel electrode covers on the part surface that described drain electrode exposes, pixel electrode is directly connected with drain electrode, the shape of pixel electrode and the shape of semiconductor layer are complementary shape, and are formed with gap between pixel electrode and semiconductor layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×