Integrated circuit structure and method for forming the same

Integrated circuit structure and method for forming the same

  • CN 101,840,888 A
  • Filed: 03/16/2010
  • Published: 09/22/2010
  • Est. Priority Date: 03/16/2009
  • Status: Active Application
First Claim
Patent Images

1. the formation method of an integrated circuit structure may further comprise the steps:

  • One semiconductor substrate with upper surface is provided;

    Form an opening, extend to this semiconductor substrate from the upper surface of this semiconductor substrate;

    Carry out one first deposition step, so that one first dielectric material is filled in this opening;

    This first dielectric material caves in;

    Carry out one second deposition step, one second dielectric material is filled to a remainder of this opening, wherein this second dielectric material is than this first dielectric material densification;

    AndThis second dielectric material that caves in is lower than the upper surface of this semiconductor substrate up to the upper surface of this second dielectric material.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×