Rare earth doped alkaline-earth silicon nitride phosphor, manufacture method and the radiation converting device containing this phosphor

Rare earth doped alkaline-earth silicon nitride phosphor, manufacture method and the radiation converting device containing this phosphor

  • CN 101,842,461 B
  • Filed: 10/14/2008
  • Issued: 09/16/2015
  • Est. Priority Date: 10/15/2007
  • Status: Active Grant
First Claim
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1. manufacture the method for rare earth doped alkaline-earth silicon nitride phosphor, described method comprises the following steps:

  • -select one or more compounds, often kind of compound comprises at least one element in rare earth element, alkaline earth element, silicon and nitrogen, and one or more compounds described are together containing forming the described rare earth doped element needed for alkaline-earth silicon nitride phosphor;

    -described compound is at high temperature reacted, to form described rare earth doped alkaline-earth silicon nitride phosphor, thus, no matter be have a mind to or be not intended to add, a small amount of oxygen is added in the rare earth doped alkaline-earth silicon nitride phosphor formed like thisIt is characterized in that-the nitrogen negatively charged ion of described alkaline-earth silicon nitride phosphor is replaced with the carbon part producing, fill or eliminate room in described phosphor lattice, cause being formed the alkaline-earth silicon nitride phosphor of the modification with such stoichiometric composition, its defect preventing the alkaline-earth silicon nitride phosphor by being formed containing non-stoichiometric oxygen at least in part and produce, the feature of the rare earth doped alkaline-earth silicon nitride phosphor wherein produced is to have following general formula;

    AE 2Si 5N 8-2xC xO x;

    RE Wherein, AE is alkaline earth element;

    RE is rare earth element;

    And wherein x is less than 1.

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